Abstract
A systematic study of the effects of lateral magnetostatic coupling of closely packed pseudo-spin-valve Ni80Fe20(10nm)∕Cu(tCu)∕Ni80Fe20(80nm) nanowire arrays with varied Cu film thicknesses is investigated. Nanowire arrays with a width of 185nm and edge-to-edge spacings of 35 and 185nm, respectively, were fabricated using deep ultraviolet lithography at 248nm exposing wavelength. When the Cu spacer layer thickness is comparable to the edge-to-edge spacing of the closely packed wires, marked changes in the magnetization reversal process are observed for the nanowire array with edge-to-edge spacing of 35nm, due to the competition between the dipolar coupling between the neighboring nanowires and interlayer magnetostatic coupling between the thick and thin Ni80Fe20 layers.
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