Dip-Coating Self-Assembly Fabrication and Polarization Sensitive Photoresponse of Aligned Single-Walled Carbon Nanotube Film.

Jiazhen Zhang,Xiaoshuang Chen,Luhan Yang,Gang Chen,Xingjun Wang,Jie Zhou,Yuxiang Sang,Lin Wang,Huang Xu,Changlong Liu,Zhuangzhuang Cui,Jingjing Liu,Tianle Guo

doi:10.3390/s22020490

Abstract

It is challenging to obtain wafer-scaled aligned films for completely exploiting the promising properties of semiconducting single-walled carbon nanotubes (s-SWCNTs). Aligned s-SWCNTs with a large area can be obtained by combining water evaporation and slow withdrawal-induced self-assembly in a dip-coating process. Moreover, the tunability of deposition morphology parameters such as stripe width and spacing is examined. The polarized Raman results show that s-SWCNTs can be aligned in ±8.6°. The derived two terminal photodetector shows both a high negative responsivity of 41 A/W at 520 nm and high polarization sensitivity. Our results indicate that aligned films with a large area may be useful to electronics- and optoelectronics-related applications.

Highlights

Accepted: 7 January 2022Single-walled carbon nanotubes (SWCNTs) are possibly promising building blocks for next-generation electronics and optoelectronics applications such as high-performance thinfilm transistors (TFTs), logic circuits [1,2], and infrared (IR) photodetectors [3,4], because of their ultra-fast charge transport mobility [5], compatible band gaps, remarkable electronic properties, great mechanical and chemical stabilities [3,4], and good compatibility with complementary metal-oxide semiconductor (CMOS) fabrication processing
All aqueous SWCNT suspensions were commercially purchased, and they were added to two different anionic surfactants, sodium dodecyl sulfate (SDS) and sodium deoxycholate (DOC), respectively, to ensure the suspensions were stable
As per SWCNTs with dispersant and different semiconducting purity, the dispersions could be categorized as follows: P1 type, P2 type, and P3 type (CVD-grown TUBALL purified nanotubes with SDS)

Summary

Introduction

Accepted: 7 January 2022Single-walled carbon nanotubes (SWCNTs) are possibly promising building blocks for next-generation electronics and optoelectronics applications such as high-performance thinfilm transistors (TFTs), logic circuits [1,2], and infrared (IR) photodetectors [3,4], because of their ultra-fast charge transport mobility [5], compatible band gaps, remarkable electronic properties, great mechanical and chemical stabilities [3,4], and good compatibility with complementary metal-oxide semiconductor (CMOS) fabrication processing. Direct growth and solution-based assembly are two important methods to obtain aligned carbon nanotube (CNT) arrays [8]. In the former method, chemical vapor deposition (CVD) is the most promising approach because of controlled growth and inexpensive fabrication [6]. There is room for high s-SWCNT density and purity for future applications. This method usually requires a temperature of

Methods

Results

Conclusion