Abstract
Diode-pumped semiconductor disk lasers, also referred to as vertical external cavity surface-emitting lasers show excellent beam characteristics in combination with high output powers. In this letter, we present a diode-pumped semiconductor disk laser based on the InAlGaAs material system without any additional phosphorus containing layers for strain compensation. We have achieved a near-infrared /spl lambda//spl sim/972-nm laser output power of 0.25 W in the fundamental transverse mode. The disk laser beam has been coupled into a single-mode fiber with a coupling efficiency of >70%. Moreover, we have shown 490-nm blue-green light generation by intracavity frequency doubling using lithium triborate (LBO).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
