Abstract
We report continuous-wave laser operation at 698 nm in Pr3+-doped LiYF4 crystal using an InGaN laser diode emitting at 444 nm with a maximum output power of 760 mW. By suppressing the oscillation at 640 and 721 nm, a maximum output power of 156 mW at 698 nm was obtained in a single transverse mode with a slope efficiency as high as 48.7%. The beam quality factors M2 in the x and y directions were measured to be 1.4 and 1.2, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
