Abstract
In this work, we measured the I-V characteristics of silica nanoparticles (SNPs) extracted from the Pleurosira laevis diatom and deposited on top of a p-type Si(111) wafer. The electric response of the SNPs-based diode is found to be more sensitive to thermal and optical power than the fresh frustules-based diode by about 3 and 5 times, respectively. Moreover, the chemically processed SNPs exhibit better diode parameters, i.e. for them the ideality factor is closer to 1, the series resistance is 3 times lower, and the shunt resistance is 4 times higher than those of the fresh frustules silica. It is stimulating to use the extracted SNPs in innovative electronic and optoelectronic applications as an abundant, cheap, and easy-to-process material.
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