Abstract
AbstractThe influence of oxygen implantation on the electrical features of n‐type CuInSe2 single crystals has been studied. n‐p type conversion in the implanted region has been observed. Photoelectric characteristics of the fabricated structures have been examined. It has been shown that ion implantation allows to fabricate CuInSe2 photoconverters with the absolute current sensitivity up to Si = 33 mA/W at 300 K.
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