Abstract
It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.
Highlights
It was proposed to use so-called asymmetric barrier layers (ABLs) on both sides of active region to improve temperature stability of diode lasers [1]
It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and improve its power characteristics under high current injection
Such selectivity of ABLs is achieved through formation of a high energy barrier in one band together with negligible barrier in another band at the ABL/waveguide heteroboundary. Charge carriers in such laser coexist and, recombine only in the active region. Implementation of this concept is aimed at suppression of parasitic recombination in waveguide layers – the main problem of diode lasers with small localization energy of charge carriers in the active region, which in particular leads to decrease of efficiency of conversion of electrical energy into energy of laser radiation
Summary
It was proposed to use so-called asymmetric barrier layers (ABLs) on both sides of active region to improve temperature stability of diode lasers [1]. It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and improve its power characteristics under high current injection.
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