Abstract
Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 μm aperture emitting at 1190 nm were fabricated. The highest emission power of these diodes in the CW mode amounted to 4.5 W per output mirror. Due to the presence of compensating GaAsP barriers, the GaInAs quantum well remains unrelaxed, which eliminates the spread in the maximum emission power of laser diodes produced from the same heterostructure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
