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Abstract
The SiH 3 radical, which plays an important role in plasma processes as well as in photo-excited processes, was investigated by high resolution infrared diode laser absorption spectroscopy. The radical was generated by the discharge of phenyl silane diluted with argon in a multi-pass absorption cell. The spectrum was recorded by the discharge modulation technique. About seventy spectral lines in the 4.5 μm region were unambiguously identified as belonging to the v 3 (Si-H degenerated stretch) vibrational band of SiH 3, and are available for application to monitoring by the infrared diode laser absorption spectroscopy (IRLAS) method.
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