Abstract
For zero temperature, we present theoretical results for the Dingle temperatures of a two-dimensional electron gas with two occupied bands. For impurity scattering, we apply their calculation to a two-band model for valley degeneracy gv=2 and gv=4 proposed recently for silicon (111). Taking into account the density of states and screening effects of the two electron gases, we predict huge differences for the Dingle temperature of the two bands and a strong density dependence for the Dingle temperature of the first band due to screening by the second band. The mobility of the two-band model shows a strong density dependence.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
