Abstract

We report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe2 nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe2.

Highlights

  • Scientific interest in exploring iron digermanide has been sustained for many years due to its complex magnetism[18,19,20,21,22]

  • Temperature and field dependent magnetization and ac susceptibility measurements show the existence of both antiferromagnetism and ferromagnetism

  • Single-crystal FeGe2 nanowires were synthesized on germanium wafer by chemical vapor deposition method

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Summary

Electrical Transport

Siwei Tang[1,2,3], Ivan Kravchenko[3], T. The assembly of single-crystal FeGe2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Similar but weaker field-dependent resistivity and hysteresis was observed at the 250 K valley-site feature while all measured temperatures outside of these windows showed no significant response to applied magnetic field. (a) Resistivity result measured during cooling with magnetic field of 60000 Oe applied perpendicular to the device plane, showing two anomalies at approximately 250 K and 200 K (left y axis), in comparison with dM/dT of FC magnetization (right y axis). In the nanowire form, with the diameter of the nanowires being comparable to the size of magnetic domains, it is reasonable that any changes associated with the spin flips and domain walls give rise to much more pronounced features in the resistivity around the transition temperatures[41]

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