Dimensional crossover in ultrathin buried conductingSrVO3layers

Abstract

The structure and resistive properties of buried ${\mathrm{SrVO}}_{3}$ layers between two insulating ${\mathrm{LaVO}}_{3}$ layers are investigated by varying the thickness of the ${\mathrm{SrVO}}_{3}$ layers between 3 and 35 monolayers. The thickest ${\mathrm{SrVO}}_{3}$ layer shows a bulklike metallic behavior, while in the thinnest ${\mathrm{SrVO}}_{3}$ layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried ${\mathrm{SrVO}}_{3}$ layer. The modification of the charge carrier properties by the reduced thickness of the ${\mathrm{SrVO}}_{3}$ layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application.