Abstract
Permanent electric dipole is a key property for effective control of semiconductor quantum-dot-based sources of quantum light. For theoretical prediction of that, complex geometry-dependent quantum simulations are necessary. Here, we use simulations of exciton transition in InGaAs quantum dots to derive a simple geometry-dependent analytical model of dipole. Our model, discussed here, enables reasonably good estimation of the electric dipole, caused in quantum dot by the elastic strain, including an externally induced one. Due to its apparent simplicity, not necessitating elaborate and time-consuming simulations, it might after experimental verification serve as a preferred choice for experimentalists enabling them to make quick estimates of built-in and induced electric dipole in quantum dots.
Highlights
Dimension-DependentDue to their discrete energy levels with the molecular-like character [1] and strong quantum confinement of electrons and holes in all dimensions [2], semiconductor quantum dots (QDs) serve as an excellent solid-state platform for a number of appealing applications.Among others, they may be used as gain material for semiconductor lasers [3,4] or as building blocks of nonvolatile universal memory, so-called QD-Flash [5,6]
Permanent electric dipole is a key property for effective control of semiconductor quantumdot-based sources of quantum light
Permanent electric dipole (p) is one of the key properties of semiconductor quantum dots connecting their electronic structure with optical activity
Summary
Due to their discrete energy levels with the molecular-like character [1] and strong quantum confinement of electrons and holes in all dimensions [2], semiconductor quantum dots (QDs) serve as an excellent solid-state platform for a number of appealing applications. Even though theoretical predictions of the electric dipole of QDs with realistic shape currently exist, they are typically based on complex single-particle quantum simulations requiring a definition of the full heterostructure, strain energy minimalization in that, and quantification of the related strain and piezoelectricity-induced changes of the confinement potentials [2]. In principle, such calculation can be done with atomistic precision within empirical pseudopotential [18,19] or tight-binding models [2,20], but since that approach is computational-heavy, it is typically used for QDs with a rather small. In this study, we extend model from our recent work [24] on QD-geometry-induced changes of electric dipole and discuss a phenomenological model of the electric dipole motivated by analytical estimation of p of 1D quantum well [25,26] and found by systematic analysis of a set of k · p simulations
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