Abstract
The use of zinc oxide (ZnO) nanowires improves charge collection, and consequently power conversion efficiency, in quantum dot (QD) based photovoltaic devices. However, the role of the nanowire geometry (e.g., density, length, and morphology, etc.) relative to the QD properties remains unexplored, in part due to challenges with controlled nanowire synthesis. Here, we independently tailor nanowire length and the active device layer thickness to study charge collection in lead sulfide (PbS) QD photovoltaic devices. We then demonstrate consistently high internal quantum efficiency in these devices by applying quantum efficiency and total reflectance measurements. Our results show that significant losses originate from ZnO nanowire–QD interfacial recombination, which we then successfully overcome by using nanowire surface passivation. This geometry-tailored approach is generally applicable to other nanowire–QD systems, and the surface passivation schemes will play a significant role in future development of n...
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.