Abstract
For advancement in future spintronics, the diluted magnetic semiconductors (DMSs) might be understood for their origin of ferromagnetic aptness. It not much clear to the ferromagnetism in DMS, that is intrinsic or via dopant clustering formation. For this, we have included a review study for the doping of transition metal and rare earth ions in ZnO. It is realized that the antiferromagnetic ordering is found in doped ZnO to achieve high-TC ferromagnetism. X-ray diffraction and Raman spectra techniques have been used to detect the wurtzite ZnO structure and lattice defects. Since ZnO has different types of morphology formation that is generally dependent on synthesis conditions and dopant level. The band gap energy of ZnO and lattice defect formation are shown by photoluminescence technique. The room temperature ferromagnetism is described with bound magnetic polaron (BMP) model in which oxygen vacancies play a major role. However, the temperature-dependent conditions are responsible for ferromagnetic ordering. The first principle calculation is used for dopant ions in ZnO for their replacement of Zn2+ atoms in the wurtzite structure as well as magnetic contribution.
Highlights
Diluted magnetic semiconductors (DMSs) and oxides raised hopes of applications based on single elements combining the logic functionalities of semiconductors with the information storage capabilities of magnetic elements [1]
The formation of bound magnetic polaron (BMP), which includes electrons locally trapped via oxygen vacancies, with the trapped electron occupying an orbital overlapping with the d shells of transition metal (TM) neighbors, might explain the room temperature ferromagnetism (RTFM) in DMS
1.4.1 Ferromagnetism of ZnO with transition metal ions From the survey of many theoretical studies, it has been found that a slight doping of TM metal ions is likely $5%, induce ferromagnetic ordering that observed at room temperature [21]
Summary
Diluted magnetic semiconductors (DMSs) and oxides raised hopes of applications based on single elements combining the logic functionalities of semiconductors with the information storage capabilities of magnetic elements [1]. Since the hole induced ferromagnetic order in p-type InMnAs and GaMnAs, a lot of research is carried out on III-V-based DMSs that failed to give room temperature ferromagnetism (RTFM). A lot of efforts are carried out to result RTFM in III-V-based DMS, i.e., GaN, GaSb, InAs, and oxide-based DMS, ZnO, TiO2, SnO2, In2O3, etc. These DMSs are Magnetic Materials and Magnetic Levitation attracting potential interest in spin-based information-processing applications. It needs high TC for such DMSs of GaN and ZnO that may relate for their wide-band gap [4]. Among DMSs, the Mn-doped GaAs is found to be ferromagnetic with TC $ 172 K is widely investigated [5]
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