Abstract
For reduction interconnect signal delay, low dielectric constant (K) materials are being introduced to replace conventional dielectrics in next generation IC technologies. In the advanced lithography processes, a bottom antireflective coating (BARC) layer for patterning low-K materials is essential. Nitride-based (silicon nitride, silicon oxynitride) films have been demonstrated to have suitable optical characteristics for both KrF and ArF lithography BARC applications. However, dielectric constants of nitride films are about 4/spl sim/8. Therefore, the nitride films should be removed after pattering low-K materials. Here we demonstrate low-K materials for both KrF and ArF lithography BARC applications. The antireflective layer is composed of diluted low-K materials, such as BCB, FLARE, and SiLK.
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