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Abstract
In this paper, the spin-transport properties of Gallium Nitride/Indium Phosphide/Gallium Nitride (GaN/InP/GaN) all semiconductor magnetic tunnel junction (MTJ) has been investigated. To induce ferromagnetic properties in the electrodes made of GaN, the electrodes are doped with Manganese (Mn). The central region is made of InP, which is a large bandgap material, thereby improving the zero-bias magnetoresistance. The electrodes used in the proposed device show ferromagnetic behavior beyond room temperature without the conductivity mismatch problem. Finally, a comparison based on the proposed device's performance parameters with the devices reported in the open literature is carried out in this work. The comparison clearly shows the pre-eminence of the proposed device over the previously reported devices as it has high TMR (1.97 × 104%) and works over a wide range of temperature.
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