Abstract
This work presents the development of a novel detector comprised of an avalanche amorphous selenium (a-Se) photoconductor and an amorphous silicon (a-Si:H) passive pixel sensor for digital X-ray imaging, in particular, for low exposure imaging applications. Electrical compatibility of a high voltage (~1000 V) avalanche a-Se photoconductor with a low voltage (~25 V) a-Si:H pixel sensor is demonstrated. Single pixel readout is done as a proof of concept.
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