Abstract
This paper discusses signal processing procedures which have been developed for three important beam adjustments required by variably shaped electron beam lithography systems: dynamic focussing adjustment, deflection distortion correction and beam size adjustment. Precise and speedy measurement of edge slope, beam position and beam size are all necessary in this context. To execute these measurements, backscattered electron signals are stored in a buffer memory following digital scanning of a shaped beam across a fiducial mark. These signals are then digitally processed in a control computer. These procedures have been applied to an EB lithography system (HL-600). Pattern accuracy of 0.2 μm over a 6.5x6.5 mm field and overlay accuracy of 0.1 μm were obtained.
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