Abstract
In this paper, a two-step clean method for TiAl protection is discussed, which could improve TiAl damage and make etch-polymer clean. Using a kind of organic alkaline chemical, marked chemical k, before traditional HF clean, the TiOx passivation layer forms on the surface TiAl, then HF cleans etch-by-product polymer. The TiAl loss by HF is reduced to 14% after chemical k treatment. The risk of TiAl damage is hence much improved.
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