Abstract
Atomically-thin semiconducting transitional metal dichalcogenides (TMDCs) are promising channel materials for future ultra-scaled electronic devices due to their high electron mobility attained at sub-nanometer thickness. In particular, monolayer WS2 has shown the highest theoretical room temperature electron mobility among other semiconducting TMDCs as a result of its low effective mass. However, it is still challenging to grow large-area and strictly monolayer WS2 through the conventional chemical vapor deposition (CVD) due to the uncontrollable growth kinetics. In this work, we provide a modified CVD process to prepare the uniform and large-area monolayer TMDCs. Theoretical simulations were performed to understand the fundamental thermodynamically mechanism of the monolayer growth. The property-variation in TMDCs due to difference in electronic structure between different layers of TMDCs can be significantly reduced based on this new approach. This poses a reliable route for the scalable growth of monolayer TMDCs, which is essential for their reliable applications in nanoelectronic devices.
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