(Digital Presentation) Nanowire Transistors with Bound‐Charge Engineering

Abstract

Low-dimensional electronic systems such as silicon nanowires exhibit weak screening which is detrimental to the performance and scalability of nanodevices, e.g., tunnel field-effect transistors. By atomistic quantum transport simulations, we show how bound charges can be engineered at interfaces of Si and low-κ oxides to strengthen screening. To avoid compromising gate control, low-κ and high-κ oxides areused in conjunction. In Si nanowire tunnel field-effect transistors, we demonstrate that bound charge engineering increases the on-state current by orders of magnitude, and the combination of oxides yields minimal subthreshold swing. Finally, an analytical model is developed for Si nanowire FET assisted by bound charge engineering. We conclude that the proposed bound-charge engineering paves a way toward improved low-power transistors.