Abstract
In this work, after X-ray and electron irradiation, the outcomes of the evaluation dynamic characteristics of interstitial atoms Sij , vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO2/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ-1/Q-1 0 of the elastic vibration structure defect density Nd and the depth of the broken layer hb , is offered for the SiO2/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO2/Si disc-shaped wafer with a thickness hSiO2 ≈ 100 nm, his = 300÷500×103 nm, and diameter D = 60÷100×10-3 m to measure the structurally sensitive internal friction Q-1 . Measurement of the internal friction background Q-1 0 at harmonic frequencies f0 and f2 allowed us to experimentally determine the nodal lines of the oscillating disks.
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