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Abstract
The threshold voltage degradation and recovery phenomena of the α-Si:H TFTs stressed by DC or AC biases under with or without UV light illumination are investigated. For the negative DC bias stress, the threshold voltage shift of the stressed α-Si:H TFTs measured in the reverse sweep mode is smaller than that in the forward sweep mode, but the threshold voltage recovery is opposite, owing to the different increment of subthreshold swing of the α-Si:H TFTs after stressing. For the AC biases stresses, there are no significant difference of threshold voltage shift between the stressed α-Si:H TFTs measured by forward sweep and reverse sweep modes due to the less increment of subthreshold swing of the α-Si:H TFTs after stressing. There are more threshold voltage degradation but less recovery of the α-Si:H TFTs stressed by lower AC frequency with the higher negative bias in a cycle than those stressed by higher AC frequency.
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