Abstract
In the present research work, the influence of Fin width thickness variation on the electrical performance parameters have been performed for the 14-nm FinFET device. Various Fin angle (i.e., θ) have been considered to analyze the effect of Fin thickness. All the analyzed results have been compared with the ideal FinFET (i.e., θ = 00) device to observe the effect of angle variation on threshold voltage (VTH ), transconductance (gm ), Gate current (IG ) and Drain Induced Barrier Lowering (DIBL). In addition, the impact of Fin width thickness variations has been used to realize the inverter Voltage Transfer Characteristics (VTC). The characteristics comparison reveals that including the effect of Fin width improves the device performance of FinFET devices.
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