(Digital Presentation) Extending the Application of Capacitively Coupled Plasma Etching Tools to the Front-End-of-Line Fin-Cut Etching Process for FinFET Mass Production

Abstract

As FinFET scales down to advanced technology nodes, Self-aligned Quadruple Patterning (SaQP) scheme is widely deployed for Fin formation, where two mandrels (MD1 and MD2) and corresponding mandrel spacers (MD1SP and MD2SP) are patterned for accurate CD transferring. The Fin-cut etching process of the MD2SP Cutting is very critical for the patterning of the Standard Cell and the SRAM patterns. This work studies the application of the Front End of Line (FEoL) MD2SP Cutting process in both inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) etchers. The mismatch between the two tools is observed and discussed in detail. For CCP tools, a degradation of line width roughness (LWR) and increase of critical dimension (CD) loading between dense and isolated patterns are observed. Compared with the ICP etchers, the CCP etchers have lower plasma dissociation and stronger physical bombardment of ions. Furthermore, it is harder to control the plasma density and directionality separately. To increase CCP tool applications in FEoL processes, we introduce a Silicon coating process to modify the photoresist (PR) during the CCP etching to harden the surface of the PR and enhance the LWR performance. Furthermore, the application of atomic layer etching (ALE) technology ensures the CD loading between the dense and isolated patterns. With the application of our study, we can broaden the application of CCP tools in FEoL for FinFET mass production.