(Digital Presentation) Effect of Active Layer Thickness on Organic Thin-Film Transistors

Abstract

Thin-Film Transistors (TFTs) are a substantial technological advancement in recent decades for various applications. The source/drain electrode layer and organic active layer thicknesses of Organic Thin-Film Transistors (OTFTs) should be optimized for better device performance. In the current study, the authors have utilized the concept of OTFTs in the assessment of bipolar transport properties in active layer blends. It offers a strategy to improve the precision of the assessment. Thereafter, in this research work, impacts of active layer thickness on physical parameters of OTFT device performance have been realized. The study's findings show how these characteristics affect device performance and the need to optimize these variables in the device. The drain current of the high-performance P3HT: PCBM-based OTFT structure was approximately 4.3 µA for the thickness of 200 nm active layer, which has the highest performance.