Abstract
This work compares the Drain-Induced Barrier Lowering (DIBL) effect in SOI nanowire transistors. The fin width, length, and temperature influence are experimentally evaluated for junctionless (JL) and inversion mode (IM) nanowire transistors. The results show that DIBL degradation with length reduction is more pronounced in IM nanowires. Although the DIBL might be higher on JL nanowires, its temperature variation has been reduced compared to IM devices.
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