Abstract
Both Ge light-emitting diodes and photodetectors are demonstrated by using the same metal-insulator-semiconductor (MIS) tunneling structure. A Ge MIS tunneling diode biased at the accumulation region is used as a light-emitting device and a Ge MIS tunneling diode biased at the inversion region is used as a photodetector. The ultrathin gate oxide film used in the MIS tunneling diode was grown by liquid phase deposition at 50 °C to lower the thermal budget. A Ge light-emitting diode has a higher quantum efficiency than a similar Si device (at least one order of magnitude stronger) due to the higher radiative recombination coefficient. With the detection of the Ge MIS photodetector, the data communication in free space is reported and demonstrated for the first time.
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