Abstract
Recently, in the field of artificial intelligence, neuromorphic devices have received significant attention for building artificial neural networks. Nano-scale resistive random access memory (RRAM) is one of the emerging electrical components for neuromorphic computing. In the present study, the synaptic characteristics are investigated in the piezoelectric BiFe1−xLuxO3 (BFLO) and Bi1−xLuxFeO3 (BLFO) (x = 0.05) based RRAM devices in a vertical configuration. Both devices show bipolar resistive switching behavior with good endurance characteristics. However, analog switching with potentiation and depression response is observed in Ag/BFLO/FTO device. The change in resistance and leakage current flow across the device is explained by the space charge limiting current conduction mechanism with regard to thermally generated and injected charge carriers. Both films possess strong electro-mechanical response with the ferroelectric and ferro-elastic domain walls oriented along 710, 1090, and 1800 directions. The electro-mechanical response and resistive switching properties make the materials viable for sensing, energy harvesting, and non-volatile memory technology. Moreover, the BFLO-based synaptic device has potential application in neuromorphic computation.
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