Abstract
We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al0.08Ga0.92N grown by gas source molecular beam epitaxy with ammonia. Digital alloys are formed by short period superlattices consisting of Al0.08Ga0.92N wells, 0.50 or 0.75 nm thick, and AlN barriers, 0.75 to 1.5 nm thick. For digital alloys with effective bandgap of 5.1 eV, average AlN composition 72%, we obtain room temperature electron concentrations up to 1×1019 cm-3 and resistivity of 0.005 Ω·cm and hole concentrations of 1×1018 cm-3 with resistivity of 6 Ω·cm. Light emitting diodes based on digital alloys are demonstrated operating in the range of 250 to 290 nm.
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