Abstract
Similarities between diffusion of hot charge carriers in semiconductors and in gases are discussed, and formulas for ${D}_{\ensuremath{\parallel}}$ and ${D}_{\ensuremath{\perp}}$, the diffusion coefficients parallel and perpendicular to the applied electric field, are given. It is shown that anisotropy of diffusion can be strong even when the carrier distribution function is nearly isotropic in momentum space.
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