Abstract
AbstractWe report results on calculations of the electronic, magnetic and transport properties of Fe/GaAs and Fe/Ge multilayer systems. On the base of the generalized Bloch theorem we have calculated the electronic structure for a set of spin‐spiral structures, which allows us to extract averaged interlayer exchange parameters and their dependence on the width of the semiconductor spacer. The dependence of the dc conductivity and magnetoresistance on the width of the semiconductor layer and the relative angle between the moments of adjacent FM‐layers allowed us to model the dependence of the resistivity on a magnetic field. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
