Abstract
We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference ΔT = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.
Highlights
The measurements presented here are done on a device fabricated from a GaAs/AlGaAs heterostructure containing a two-dimensional electron gas (2DEG) with a nominal charge carrier density of n = 2.4 × 1011 cm−2 and an electron mobility of μ = 6.9 × 105 cm2 V−1 s−1 at 4.2 K
Between two triple points (TP) only one electron is added to the DQD system which is shared between both dots [19]
Since the quantum point contact (QPC) is set to a conductance plateau, its contribution to the measured signal is negligible [1] and the detected voltage is directly related to the thermovoltage generated by the DQD-system
Summary
Institut fur Physikalische und Theoretische Chemie, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany. 4 Author to whom any correspondence should be addressed. Institut fur Physikalische und Theoretische Chemie, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany. 4 Author to whom any correspondence should be addressed.
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