Abstract
Ohmic contacts to n-layers of gallium arsenide-based heterobipolar nanoheterostructures obtained by layer electron-beam evaporation Ge/Au/Ni/Au are studied. Time and temperature dependencies of diffusion profiles of doping Ge distribution are calculated. The interface of metal-semiconductor is analyzed with SEM, then an RTA installation design and methodology of RTA are suggested based on the results of this study. This allows to obtain ohmic contacts with low resistance and minimum transition layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
