Abstract
An integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon annealed in various media and temperature ranges (1100–1280 °C) was performed for the first time. The tracer technique, autoradiography, measurements of isothermic capacity and current relaxation, conductivity, and the Hall effect were used for the investigations. The diffusion parameters, solubility, and an acceptor character of scandium and praseodymium impurities in silicon were determined.
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