Abstract
Copper diffuses into GaAs single crystals at rates comparable to those found for copper in silicon and germanium. As with germanium, the diffusion appears to follow the dissociative mechanism. Autoradiographic evidence for this is presented. It is shown that the diffusion process requires both interstitial and substitutional roles for copper. The solubility of copper in single crystals of GaAs has been determined from 700 to 1160δC by means of 64Cu. Copper is found to be an acceptor in GaAs, with a probable ionization energy of 0.063 eV. Deeperlying levels have been found in GaAs containing copper, but their identification is obscured by compensating impurities in the original material.
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