Abstract
The diffusion properties of chalcogens (S, Se, Te) implanted into SiO 2 were studied via secondary ion mass spectroscopy (SIMS) profiling between room temperature and the glass transition temperature (800–950 °C). Annealing of Te-containing samples leads directly to precipitation of metallic tellurium nanocrystals within the implantation profile. The S and Se concentration profiles were fitted by using a simple diffusion model in order to provide estimates of the diffusion constant and approximate solubility of these fast moving chemical species. A comparison of their differing diffusion behavior with complementary data on these systems suggests that (i) their oxidation states play a crucial role and (ii) the chalcogen propagation mechanism actually involves complex chemical interactions.
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