Abstract
Growth of interstitial agglomerates, that are formed in InP by post-annealing above 700 K following 200 keV electron irradiation, has been systematically examined by transmission electron microscopy to understand the migration of point defects in InP. The nucleation and growth of the agglomerates stopped at an early stage of post-annealing. The number density of interstitial atoms in agglomerates, estimated after the growth of all agglomerates stops, did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2.5×1022 cm-2. These results were well explained by a model in which the agglomerates were formed through the migration of Ini–Pi interstitial-pairs. The migration energy for the pairs was estimated as 1.52 eV.
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