Abstract
Diffusion of Pt in Si was investigated with the aid of spreading-resistance analysis using substrates of different dislocation density. Experiments on virtually perfect, non-dislocated Si provide evidence for the kick-out mechanism by the appearance of characteristic features in the concentration-depth profiles and by the diffusion-induced formation of stacking faults. In solar-grade Si, bulk incorporation of substitutional Pt is governed by the annihilation of self-interstitials at grown-in dislocations having a density of about 109 m-2. In this material the efficiency of dislocations as self-interstitial sinks appears to be reduced and dependent on penetration depth. Measurements on plastically deformed Si with 1011 to 1013 dislocations/m2 yield for the first time diffusion profiles that are determined by the transport properties of interstitial Pt. The temperature dependence of the overall Pt diffusivity is characterized by an activation energy of 1.79 eV and a pre-exponential factor of 2.1*10-4 m2 s-1.
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