Abstract
Oxygen has been diffused into silicon at temperatures above 1250°C. The diffused layers have been detected by subjecting the samples to a second heat treatment at 450°C. The donors, which then form from the oxygen, cause the layer to convert to n type. The relationship between donor and oxygen concentrations was established by studying donor formation in crystals of known oxygen concentration. From these results and the electrical properties of the layers, the diffusivity and solubility of oxygen in silicon has been measured. For silicon, in contact with SiO2 (glass), the heat of solution is (2.3±0.3) ev and the diffusivity is given by D=135exp(−3.5 ev/kT).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.