Diffusion of nitrogen implanted in titanium nitride (TiN1-x)

Abstract

The diffusion of nitrogen 15, implanted in non-stoichiometric titanium nitride single-crystals (δ - TiN1-x phase), was investigated in the 700 °C-1400 °C temperature range. The annealing time was about 2 hours. The concentration profiles of nitrogen 15, after implantation and diffusion annealing, were measured by Secondary Ion Mass Spectrometry (SIMS). The diffusion coefficients were determinated by fitting the experimental and theoretical profiles, corresponding to the solution of the Fick's law for an initial partly Gaussian profile. The diffusion coefficient of nitrogen 15 can be described by the relation : D = 4 x 10^-7 (cm 2/s) exp [- 2.26 ± 0.2 (eV/at)/kT], in the layer near the surface (at high tracer concentration) and by the relation : D = 1.3 × 10^-8 (cm2/s) exp [-1.65 ± 0.2 (eV/at)/kT] in a deeper layer.