Diffusion of interfacial point defects studied by BEEM

Abstract

Point defects located at the CoSi2/Si(111) interface have been imaged using ballistic electron emission microscopy. Their density was found to be lower close to interfacial dislocations. In the dislocation core, an accumulation of point defects could be observed. The measurements are explained by diffusion and trapping of point defects during an annealing step in the growth procedure. In ballistic electron emission spectroscopy a second onset was found, which can be identified with the delayed onset predicted for the epitaxial CoSi2/Si(111) interface.