Abstract
AbstractThe ion bombardment technique was used to study inert gas diffusion in polycrystalline copper. Radioactive single charged ions of krypton and xenon were implanted in copper at energies between 20 and 450 keV. The ion‐doped specimens were thermally annealed, and the influence on gas release of implanted ions, implantation energy, and dose was investigated. A new chemical sectioning technique was used to measure the integral distribution of the implanted ions before and after thermal annealing. By correlating the measurements of fractional gas release with those of diffusion profiles, it was possible to obtain a model for inert gas diffusion in copper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.