Diffusion of implanted impurities in amorphous Si

Abstract

The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150–600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or “substitutional-like” diffusion coefficients in crystalline Si.