Abstract
Secondary Ion Mass Spectrometry and spreading resistance profiling are used to study the diffusion of hydrogen in n-type Si and the related passivation of donor dopants (Sb, As, P) through formation of neutral donor-hydrogen complexes. Passivation efficiencies of over 95% were obtained in highly doped n-type Si, comparable to the efficiencies achieved in p-type material. The effective diffusivity of hydrogen in n-type Si is determined by a number of different parameters, including the charge state of the hydrogen and the efficiency of platelet detect formation. At the same doping levels, the diffusivity of hydrogen is faster in p-type Si than in n-type material, although the differences are minimized at high hydrogenation temperatures and low doping levels. The injection of minority carriers during the hydrogenation process increases the effective diffusivity by reducing the trapping efficiency at dopant impurities.
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