Abstract
The diffusion rate of grown-in defects in InP is studied by determining the flux of defects from a source layer to underlying quantum wells (QWs). The grown-in defects are caused by epitaxial growth at lower than optimal temperatures, and are located in an upper InP buffer. We study the photoluminescence blueshift of the QWs as a function of the thickness of the buffer and as a function of anneal time. Modeling correlates the intermixing of the quantum wells to the concentration of defects at the wells. Possible locations of defect sinks and the identity of the grown-in defects are also discussed.
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