Diffusion of As ions and self-diffusion in silicon during implantation

Abstract

Experimental concentration profiles of As ions in a silicon substrate at temperatures of 20, 600, and 1050°C and ion current of 40 µA/cm2, as well as at 1050°C and 10 µA/cm2, are presented. On the basis of our and previously published experimental data, the process of radiation-stimulated ionic diffusion and self-diffusion in silicon is simulated. A number of interesting dependences, which are discussed in the conclusion of this study, are obtained.