Diffusion of Arsenic in Germanium from a Germanium Arsenide Source: Prediffusion and Diffusion

Abstract

This paper reports on the diffusion of arsenic in germanium from a germanium arsenide source. This versatile source is suitable for prediffusion over a temperature range of 475° to 725°C, and produces sheet resistances varying from 3000 to 0.5 ohms/□. Techniques for diffusion at temperatures up to 900°C have also been developed. Loss of dopant through outdiffusion has been eliminated even for high‐resistivity layers. Background resistivity is maintained by rigorous cleaning prior to diffusion and annealing after diffusion. The closed box technique is used in both cases.