Diffusion mediated by doping and radiation-induced point defects

Abstract

The growth of isotopically enriched epitaxial layers enables the preparation of material heterostructures, highly appropriate for simultaneous self- and dopant-diffusion studies. The advance in solid-state diffusion is demonstrated by experiments on the impact of dopant diffusion and proton irradiation on self-diffusion in silicon. Accurate modeling provides valuable information about the type and charge states of native point defects and the mechanisms of atomic transport. The results are compared with recent theoretical calculations. Consistencies and differences between experiment and theory are highlighted.